The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 307-314

  Wang, J ^a   Robinson, B J ^a   Thompson, D A ^a   Simmons, J G ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

InP; MBE; Patterned substrate; Quantum wire; V groove

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031125216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00905-0     Document Type: Article

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