Silicon carbide for high-temperature microelectronics: Recent advances in material growth via gas source MBE and device research

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 240-247

  Kern, R S ^a,b   Davis, Robert F ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b North Carolina State University   (United States)

Author keywords

Bipolar transistors; Deposition; Devices; Kinetics; Molecular beam epitaxy; MOSFET; SiC; Silicon carbide; Thyristors

Indexed keywords

BIPOLAR TRANSISTORS; DEPOSITION; FILM GROWTH; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SEMICONDUCTOR DOPING; THIN FILMS; THYRISTORS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SILICON CARBIDE;

EID: 0031125134     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01991-5     Document Type: Article

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