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Volumn 377-379, Issue , 1997, Pages 130-134

Adsorption of Sb on GaAs(111)B studied by photoemission and low energy electron diffraction

(11) Cafolla, A A a McGinley, C a McLoughlin, E a Hughesa, G a Moriarty, P b Dunn, A W b Ma, Y R b Teehan, D c Murphy, B c Downes, S c Woolf, D A d

a DUBLIN CITY UNIVERSITY (Ireland)

b UNIVERSITY OF NOTTINGHAM (United Kingdom)

c DARESBURY LABORATORY (United Kingdom)

d CARDIFF UNIVERSITY (United Kingdom)

Author keywords

Antimony; Gallium Arsenide; Low energy electron diffraction; Metal semiconductor interfaces; Photoelectron emission; Soft X ray photoelectron spectroscopy

Indexed keywords

ADSORPTION; ANNEALING; CRYSTAL ORIENTATION; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON EMISSION; SOFT X RAY PHOTOELECTRON SPECTROSCOPY (SXPS); SURFACE RECONSTRUCTION;

ANTIMONY;

EID: 0031124915 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(96)01379-9 Document Type: Article

Times cited : (7)

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