MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties

Journal of Alloys and Compounds

Volumn 251, Issue 1-2, 1997, Pages 328-331

  Hinds, B J ^a   McNeely, R J ^a   Chen, J ^a   Dias, C ^a   Studebaker, D L ^a   Marks, T J ^a,c   Hogan, T P ^b   Schindler, J L ^b   Kannewurf, C R ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

^c NONE   (United States)

Author keywords

Devices; Dielectrics; MOCVD; Multilayer; Tl 2212

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; MAGNESIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; OXIDE SUPERCONDUCTORS; POLYCRYSTALLINE MATERIALS; SUBSTRATES; THALLIUM COMPOUNDS;

SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR (SIS) TRILAYERS;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0031124756     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(96)02701-6     Document Type: Article

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