Atomic-layer fabrication of high-Tc tunnel junctions

Journal of Alloys and Compounds

Volumn 251, Issue 1-2, 1997, Pages 201-205

  Bozovic, Ivan ^a   Eckstein, J N ^a  

^a Varian Inc   (United States)

Author keywords

Atomic layer fabrication; High Tc tunnel junctions

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC INSULATING MATERIALS; ELECTRODES; JOSEPHSON JUNCTION DEVICES; MOLECULAR BEAM EPITAXY; OXIDE SUPERCONDUCTORS; SUPERCONDUCTING TRANSITION TEMPERATURE; TUNNEL JUNCTIONS;

ATOMIC LAYER FABRICATION; QUASIPARTICLE TUNNELING;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0031124734     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(96)02798-3     Document Type: Article

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