Effect of layer structure on the electrical properties of contacts to p-type In0.53Ga0.47As/InP

Thin Solid Films

Volumn 298, Issue 1-2, 1997, Pages 9-13

  Leech, Patrick W ^a   Reeves, Geoffrey K ^b  

^a TELSTRA RESEARCH LABORATORIES   (Australia)

^b RMIT UNIVERSITY   (Australia)

Author keywords

Contacts; Electrical properties and measurements; Multilayers; Rutherford backscattering spectroscopy

Indexed keywords

INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC RESISTANCE MEASUREMENT; GOLD; METALLIZING; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; THERMAL DIFFUSION IN SOLIDS; THERMAL EFFECTS;

OHMIC CONTACTS;

EID: 0031124732     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08753-6     Document Type: Article

References (11)

1. P.W. Leech and G.K. Reeves, Mater. Res. Soc. Proc., 318 (1993) 183.
2. P.W. Leech, G.K. Reeves and M.H. Kibel, J. Appl. Phys., 76 (8) (1994) 4713.
3. A. Piotrowska, E. Kaminska, S. Kwiatkowski and A. Turos, J. Appl. Phys., 73 (9) (1993) 4404.
4. C.C. Han, X.Z. Wang, S.S. Lau, R.M. Potenski, M.A. Tischler and T.F. Kuech, Appl. Phys. Lett., 58 (15) (1991) 1617.
5. H. Okada, S. Shikata and H. Hayashi, Jpn. J. Appl. Phys., 30 (1991) 558.
6. C. Allevato, J. Selders, J. Schulte and H. Beneking, Solid State Electron., 30 (1987) 1039.
7. G.K. Reeves and H.B. Harrison, IEEE Electron. Device Lett., EDL-3 (1982) 111.
8. L. Zheng, J. Appl. Phys., 71 (1992) 3566.
9. J. Vandenberg, H. Temkin, R. Hamm and M. Diguiseppe, Thin Solid Films, 104 (1983) 419.
10. R. Bruce, D. Clarke and S. Eicher, J. Electron. Mater., 19 (1990) 225.
11. J. Herniman, J.S. Yu and A.E. Staton-Bevan, Appl. Surf. Sci., 52 (1991) 289.