XAFS studies of self-aligned platinum silicide thin films at the Pt M3, 2 edge and the Si K-edge

Journal De Physique. IV : JP

Volumn 7, Issue 2 Part 2, 1997, Pages

  Naftel, S J ^a   Bzowski, A ^a   Sham, T K ^a   Xu, D X ^b   Das, S R ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONIC STRUCTURE; METALLIC FILMS; PLATINUM; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SPUTTER DEPOSITION; TRANSITION METALS;

THIN FILM SILICIDES; X RAY ABSORPTION FINE STRUCTURES (XAFS) SPECTROSCOPY;

THIN FILMS;

EID: 0031124197     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. See for example, Appl. Surf. Sci. 53 (1991); the entire volume deals with metal silicides and their applications.
2. Das S. R., Xu D.-X., Phillips J., McCaffrey J., LeBrun L., and Naem A., MRS Symp. Proc., 318 (1994) 129-134.
3. Sham T. K., Naftel S. J., Coulthard I., This conference.
4. Sham T. K., Naftel S. J., Coulthard I., J. Appl. Phys., 79 (1996) 7134-7138.
5. Rossi G., Surf. Sci. Rep., 7 (1987) 1-101.
6. Mattheiss L. F., Dietz R. E., Phys. Rev. B. 22 (1980) 1663-1673.
7. Weijs P. J. W., Czyżyk M. T., van Acker J. F., Speier W., Goedkoop J. B., van Leuken H., Hendrix H. J. M., de Groot R. A., van der Laan G., Buschow K. H. J., Wiech G., Fuggle J. C., Phys. Rev. B. 41 (1990) 11899-11910.