An improvement of surface smoothness and lattice match of CeO2 buffer layers on R-sapphire processed by MOCVD

Journal of Alloys and Compounds

Volumn 251, Issue 1-2, 1997, Pages 318-321

  Graboy, I E ^a   Markov, N V ^a   Maleev, V V ^a   Kaul, A R ^a   Polyakov, S N ^a   Svetchnikov, V L ^b   Zandbergen, H W ^b   Dahmen, K H ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c FLORIDA STATE UNIVERSITY   (United States)

Author keywords

Deposition rate decrease; MOCVD; Post deposition annealing

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL LATTICES; DOPING (ADDITIVES); EPITAXIAL GROWTH; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE SUPERCONDUCTORS; SAPPHIRE; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

LATTICE MATCHING;

CERIUM COMPOUNDS;

EID: 0031124138     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(96)02700-4     Document Type: Article

References (4)

1. F. Wang, R. Woerdenweber, Thin Solid Films, 227 (1993) 200.
2. I. Graboy et al., 4th Int. Conf. Materials and Mechanisms of Superconductivity High Temperature Superconductors, Grenoble (France), 5-9 July, 1994. Abstracts, 151.
3. A. Kaul, B. Seleznev, J. Physique, 3 coll. C3 (1993) 375.
4. Von G. Brauer, H. Gradinger, Z. Anorg. Allg. Chem., 276 (1954) 14.