DAFS study of strained III-V epitaxial semiconductors

Journal De Physique. IV : JP

Volumn 7, Issue 2 Part 2, 1997, Pages

  Proietti, M G ^a   Renevier, H ^b   Berar, J F ^b   Dalakas, V ^b   Hodeau, J L ^b   Armelles, G ^c   Garcia J ^a  

^a UNIVERSITY OF ZARAGOZA   (Spain)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PLASTIC DEFORMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; STRAIN; STRESS RELAXATION; SUBSTRATES; X RAY SPECTROSCOPY;

DIFFRACTION ANOMALOUS FINE STRUCTURE (DAFS) SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031123298     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1997225     Document Type: Article

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