Experimental evidence of a metal-insulator transition in a half-filled Landau level

Solid State Communications

Volumn 102, Issue 4, 1997, Pages 327-330

  Liang, C T ^a   Frost, J E F ^a   Simmons, M Y ^a   Ritchie, D A ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A. Heterojunctions; A. Semiconductors; D. Electron transport; D. Fractional quantum hall effect; D. Phase transitions

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; ORDER DISORDER TRANSITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

LANDAU LEVEL FILLING FACTOR; METAL INSULATOR TRANSITION;

HETEROJUNCTIONS;

EID: 0031123084     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00764-8     Document Type: Article

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