The effects of grain boundary diffusion anisotropy on via electromigration failure

Journal of Applied Physics

Volumn 81, Issue 7, 1997, Pages 3064-3068

  Ghiti, A ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; DIFFUSION; FAILURE ANALYSIS; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; TEMPERATURE DISTRIBUTION; THREE DIMENSIONAL;

ELECTROMIGRATION FLUXES; GRAIN BOUNDARY DIFFUSION; MULTILEVEL INTERCONNECT VIAS; STRESS MIGRATION; VOID FORMATION;

ELECTROMIGRATION;

EID: 0031122656     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364341     Document Type: Article

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