Conductive indium-doped zinc oxide films prepared by atmospheric-pressure chemical vapour deposition

Journal of Materials Science Letters

Volumn 16, Issue 8, 1997, Pages 629-631

  Nishino, J ^a   Kawarada, T ^a   Ohshio, S ^a   Saitoh, H ^a   Maruyama, K ^a   Kamata, K ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; INDIUM; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; VAPORIZATION; X RAY CRYSTALLOGRAPHY; ZINC OXIDE;

ATMOSPHERIC PRESSURE THERMAL CHEMICAL VAPOUR DEPOSITION (CVD); OXIDE FILMS;

CONDUCTIVE FILMS;

EID: 0031122043     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018511131738     Document Type: Article

References (6)

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3. H. CZTERNASTEK, A. BRUDNIK and M. JACHIMOWSKI, Solid St. Commun. 65 (1988) 1025.
4. S. MAJOR, A. BANERJEE and K. L. CHOPRA, Thin Solid Films 108 (1983) 333.
5. J. NISHINO, S. OHSHIO and K. KAMATA, J. Amer. Ceram. Soc. 75 (1992) 3469.
6. K. KAMATA, J. NISHINO, S. OHSHIO, K. MARUYAMA and M. OHTUKI, ibid. 77 (1994) 505.