Surfactant-mediated growth of indium on GaAs(001)

Surface Science

Volumn 377-379, Issue , 1997, Pages 953-957

  Schintke, S ^a   Resch Esser, U ^a   Esser, N ^a   Krost, A ^a   Richter, W ^a   Fimland, B O ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Gallium arsenide; Growth; Indium

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; FILM GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

THERMAL DESORPTION; ULTRAHIGH VACUUM (UHV);

SEMICONDUCTING INDIUM;

EID: 0031121709     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01528-2     Document Type: Article

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