C-t analysis of MOS capacitors under constant current stress

IEEE Electron Device Letters

Volumn 18, Issue 4, 1997, Pages 132-134

  Park, Young Bog ^a   Schroder, Dieter K ^a   Lim, Il Hwan ^b  

^a Arizona State University   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGED PARTICLES; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MOS DEVICES;

CAPACITANCE TIME ANALYSIS; FLATBAND VOLTAGE SHIFT; HIGH OXIDE FIELD STRESS; INTERFACE TRAP DENSITY;

CAPACITORS;

EID: 0031121671     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.563306     Document Type: Article

References (6)

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2. 2 under charge injection stress," J. Appl. Phys., vol. 60, pp. 2024-2036, Sept. 1986.
3. 2 polysilicon-gate MOS capacitors," Solid State Electron., vol. 30, pp. 829-834, Aug. 1987.
4. D. J. DiMaria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, pp. 3367-3384, Apr. 1993.
5. J. S. Kang and D. K. Schroder, "The pulsed MIS capacitor - A critical review," Phys. Stat. Sol., vol. 89a, pp. 13-43, May 16, 1985.
6. D. K. Schroder, Advanced MOS Devices. Reading, MA: Addison-Wesley, 1987, pp. 18-26.