Control of SiC growth and graphitization in sublimation sandwich system

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 340-344

  Karpov, S Yu ^a   Makarov, Yu N ^b   Ramm, M S ^c   Talalaev, R A ^c  

^a Advanced Technology Cent   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Graphitization; SiC; Sublimation growth

Indexed keywords

CRYSTAL GROWTH; GRAPHITIZATION; MATHEMATICAL MODELS; SINGLE CRYSTALS; SUBLIMATION;

SUBLIMATION SANDWICH METHOD (SSM);

SILICON CARBIDE;

EID: 0031120986     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01998-8     Document Type: Article

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