Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 535-544

  Yun, Ilgu ^b   Menkara, Hicham M ^c   Wang, Yang ^b   Oguzman, Ismail H ^b   Kolnik, Jan ^b   Brennan, Kevin F ^b   May, Gary S ^a,b   Summers, Christopher J ^c   Wagner, Brent K ^c  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; INDUCED CURRENTS; MOLECULAR BEAM EPITAXY; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SPECTROMETRY;

ELECTRON BEAM INDUCED CURRENT METHOD; ENERGY DISPERSIVE SPECTROMETRY; FREE CARRIER CONCENTRATION MEASUREMENTS; MULTIPLE QUANTUM WELL AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0031120845     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563355     Document Type: Article

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