Decoupled plasma source technology: Process region choices for silicide etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2514-2520

  Pan, Shaoher ^a   Xu, Songlin ^a   Podlesnik, Dragan ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Decoupled plasma source; Dry etch; Etch uniformity; Gate etch; Highly selective etch; Polysilicon etch; Reactive ion etch; WSix etch

Indexed keywords

DECOUPLED PLASMA SOURCE (DPS); HIGHLY SELECTIVE ETCHING;

CORRELATION METHODS; ELECTRON DENSITY MEASUREMENT; GATES (TRANSISTOR); PHOTORESISTS; PLASMA ETCHING; PLASMA SOURCES; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031120552     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2514     Document Type: Article

References (7)

1. R. U. Bennett and T. P. Chow: Solid State Technol. 28 (1985) 193.
2. D. S. Fischl, G. W. Rodrigues and D. W. Hess: J. Electrochem. Soc. 135 (1988) 2016.
3. J. M. Parks and R. J. Jaccodine: J. Electrochem. Soc. 138 (1991) 2736.
4. R. Lee and F. L. Terry, Jr.: J. Vac. Sci. Technol. B 9 (1991) 2747.
5. J.B. Carter, J. P. Holland, E. Peltzer, B. Richardson, E. Bogle, H. T. Nguyen, Y. Melaku, D. Gates and M. Ben-Dor: J. Vac. Sci. & Technol. A 11 (1993) 1301.
6. G. W. Gibson, Jr., and D. J. Hemker: Semicond. Int. 19 (1996), (8)193.
7. K. Nojiri, K. Tsunokuni and K. Yamazaki: J. Vac. Sci. & Technol. B 14 (1996) 1791.