Vertical cavity lasers on p-doped substrates

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 783-784

  Lear, K L ^a   Hou, H Q ^a   Banas, J J ^a   Hammons, B E ^a   Furioli, J ^b,c   Osinski M ^b,d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c TELECOM PARISTECH   (France)

^d UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MIRRORS; PROBES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

FOUR POINT PROBE MEASUREMENT; SEMICONDUCTOR JUNCTION LASER; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0031120131     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970492     Document Type: Article

References (9)

1. OSINSKI, M., NAKWASKI, W., and VARANGLE, P.: 'Current uniformity and series resistance in vertical-cavity proton-implanted top-surface-emitting lasers grown on p-substrates'. (unpublished)
2. HADLEY, M.A., WILSON, G.C., LAU, K.Y., and SMITH, J.S.: 'High single-transverse-mode output from external-cavity surface-emitting laser diodes', Appl. Phys. Lett., 1993, 63, pp. 1607-1609
3. LEI, C., HODGE, L., DUDLEY, J., KEEVER, M., and LIANG, B.: 'High performance OMVPE grown 850nm VCSELs on both N-type and P-type substrates'. High-Speed Opto-Electronics for Communications II, Snowbird, Utah, 11-15 August 1996
4. KOPF, R.F., SCHUBERT, E.F., DOWNEY, S.W., and EMERSON, A.B.: 'N-and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistance', Appl. Phys. Lett., 1992, 61, pp. 1820-1822
5. 4', J. Cryst. Growth, 1994, 141, pp. 324-330
6. CHOQUETTE, K.D., SCHNEIDER, R.P., LEAR, K.L., and GEIB, K.M.: 'Low threshold voltage vertical-cavity lasers fabricated by selective oxidation', Electron. Lett., 1994, 30, pp. 2043-2044
7. LEAR, K.L., and SCHNEIDER, R.P.: 'Uniparabolic mirror grading for vertical cavity surface emitting lasers', Appl. Phys. Lett., 1996, 68, pp. 605-607
8. LEAR, K.L., and CHALMERS, S.A.: Overcoming the resistance barrier to better vertical-cavity surface-emitting lasers'. Vertical-Cavity Surface-Emitting Laser Arrays, Los Angeles, 27-28 January 1994
9. PETERS, M.G., THIBEAULT, B.J., YOUNG, D.B., SCOTT, J.W., PETERS, F.H., GOSSARD, A.C., and COLDREN, L.A.: 'Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers', Appl. Phys. Lett., 1993, 63, pp. 3411-3413