Magnetic field sensor with linear response

Sensors and Actuators, A: Physical

Volumn 59, Issue 1-3, 1997, Pages 149-152

  Logofatu, Michaela ^a   Munteanu, I ^a   Logofatu, B ^a   Lazarescu, M F ^b  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Magnetic field sensor; Neutron irradiation; Polycrystalline InAs

Indexed keywords

HALL EFFECT; MAGNETIC FIELD MEASUREMENT; MAGNETORESISTANCE; NEUTRON IRRADIATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS;

MAGNETIC FIELD SENSOR;

SENSORS;

EID: 0031119969     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80165-3     Document Type: Article

References (4)

1. H. Weiss, Structure and Application of Galvanomagnetic Devices, Pergamon Press, Oxford, 1969, pp. 24
2. I. Licea, B. Logofatu, M. Logofatu, I. Muntenu, I. Dima and M.F. Lazarescu, On the dependence of Hall mobility on the magnetic field in n-InAs, Anal. Univ. Buc., XXXV, (1986) 53-58.
3. V.A.J. Lint, M. Flanagan and R.E. Readon, Mechanisms of Radiation Effects in Electronic Materials, Wiley, New York, 1980, pp. 335-354.
4. 0.95Sb grown by direct synthesis, XIth Int. Conf. Crystal Growth, Hague, Netherlands, June 18-23, 1995.