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Journal De Physique. IV : JP

Volumn 7, Issue 2 Part 2, 1997, Pages

Strain-induced atomic rearrangements in Ge overlayers on Si(001)

(3) Oyanagi, H a Sakamoto, K a Shioda, R a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN; X RAY SPECTROSCOPY;

ADATOMS; DIMERS; X RAY ABSORPTION FINE STRUCTURE (XAFS) SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031119947 PISSN: 11554339 EISSN: None Source Type: Conference Proceeding
DOI: 10.1051/jp4:1997201 Document Type: Article

Times cited : (3)

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