Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 464-466

  Wang, Qi Yuan ^a   Cai, Tian Hai ^a   Yu, Yuan Huan ^a   Lin, Lan Ying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC CONDUCTIVITY OF SOLIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING;

FREE CARRIER ABSORPTION INTERFERENCE; WAFER THINNING;

SEMICONDUCTING SILICON;

EID: 0031119610     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/022     Document Type: Article

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