Simulation of chemical downstream etch systems correlation of the effects of operating conditions on wafer etch rate and uniformity

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1514-1521

  Vosen, S R ^a,b   Meeks, E ^a,b   Larson, R S ^b   Shon, J W ^b  

^a ELECTROCHEMICAL SOCIETY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW OF FLUIDS; IONS; MATHEMATICAL MODELS; PLASMA SOURCES; SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICAL DOWNSTREAM ETCH SYSTEMS; CHEMICALLY REACTING FLOW MODEL; PLASMA CHEMISTRY MODEL;

PLASMA ETCHING;

EID: 0031119169     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837620     Document Type: Article

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