The electronic energy levels of Si-based nanocrystalline materials: Theory compared with experiment

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 163-166

  Vervoort, Louis ^a   Saúl, Andrés ^a   Bassani, Franck ^a   Arnaud D'Avitaya, François ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Electron wave functions; Linear combination of atomic orbitals; Luminescence

Indexed keywords

ATOMS; CALCIUM COMPOUNDS; CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; LUMINESCENCE; NANOSTRUCTURED MATERIALS; OXYGEN; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

LINEAR COMBINATION OF ATOMIC ORBITAL; X RAY ABSORPTION MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0031118813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09477-1     Document Type: Article

References (12)

1. See the articles presented in this volume.
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4. F. Bassani, L. Vervoort, I. Mihalcescu, J.C. Vial and F. Arnaud d'Avitaya, J. Appl. Phys., 79 (1996) 4066.
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10. We include Si-H interaction for first neighbours only.
11. S. Ossicini, A. Fasolino and F. Bernardini, Phys. Stat. Solidi. (b), 190 (1995) 123.
12. There is one difference though, as in Ref. [11] one also finds an indirect gap for 1 DL.