Rate-equation-based laser models with a single solution regime

Journal of Lightwave Technology

Volumn 15, Issue 4, 1997, Pages 717-729

  Mena, Pablo V ^a,b,c   Kang, Sung Mo ^a,b   DeTemple, Thomas A ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of Illinois ^*  (United States)

Author keywords

Circuit simulation; Equivalent circuits; Gain saturation; Quantum well lasers; Rate equations; Semiconductor lasers; SPICE

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; GAIN MEASUREMENT; MATHEMATICAL MODELS;

LINEAR GAIN SATURATION TERM; NONNEGATIVE INJECTION CURRENT; RATE EQUATION BASED MODELS; SOFTWARE PACKAGE SPICE;

QUANTUM WELL LASERS;

EID: 0031118215     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.566695     Document Type: Article

References (25)

1. S. A. Javro and S. M. Kang, "Transforming Tucker's linearized laser rate equations to a form that has a single solution regime," J. Lightwave Technol., vol. 13, pp. 1899-1904, Sept. 1995.
2. D. J. Channin, "Effect of gain saturation on injection laser switching," J. Appl. Phys., vol. 50, no. 6, pp. 3858-3860, June 1979.
3. G. P. Agrawal, "Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers," IEEE J. Quantum Electron., vol. 26, no. 11, pp. 1901-1909, Nov. 1990.
4. R. S. Tucker and D. J. Pope, "Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser," IEEE J. Quantum Electron., vol. 19, no. 7, pp. 1179-1183, July 1983.
5. H. J. A. da Silva, R. S. Fyath, and J. J. O'Reilly, "Sensitivity degradation with laser wavelength chirp for direct-detection optical receivers," Inst. Elec. Eng. Proc., vol. 136, pt. J, pp. 209-218, Aug. 1989.
6. K. Hansen and A. Schlachetzki, "Transferred-electron device as a large-signal laser driver," IEEE J. Quantum Electron., vol. 27, pp. 423-427, Mar. 1991.
7. D. E. Dodds and M. J. Sieben, "Fabry-Perot laser diode modeling," IEEE Photon. Technol. Lett., vol. 7, no. 3, pp. 254-256, Mar. 1995.
8. K. Y. Lau and A. Yariv, "High-frequency current modulation of semiconductor injection lasers," in Semiconductors and Semimetals, W. T. Tsang, Ed. Orlando: Academic, 1985, vol. 22, pt. B.
9. L. V. T. Nguyen, A. J. Lowery, P. C. R. Gurney, and D. Novak, "A time-domain model for high-speed quantum-well lasers including carrier transport effects," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 494-504, June 1995.
10. T. A. DeTemple and C. M. Herzinger, "On the semiconductor laser logarithmic gain-current density relation," IEEE J. Quantum Electron., vol. 29, pp. 1246-1252, May 1993.
11. J. E. Bowers, "High speed semiconductor laser design and performance," Solid-State Electron., vol. 30, no. 1, pp. 1-11, 1987.
12. D. McDonald and R. F. O'Dowd, "Comparison of two- and three-level rate equations in the modeling of quantum-well lasers," IEEE J. Quantum Electron., vol. 31, pp. 1927-1934, Nov. 1995.
13. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2008, Oct. 1992.
14. W. Rideout, W. F. Sharfin, E. S. Koteles, M. O. Vassell, and B. Elman, "Well-barrier hole burning in quantum well lasers," IEEE Photon. Technol. Lett., vol. 3, pp. 784-786, Sept. 1991.
15. S. C. Kan and K. Y. Lau, "Intrinsic equivalent circuit of quantum-well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 528-530, June 1992.
16. M. F. Lu, J. S. Deng, C. Juang, M. J. Jou, and B. J. Lee, "Equivalent circuit model of quantum-well lasers," IEEE J. Quantum Electron., vol. 31, pp. 1418-1422, Aug. 1995.
17. R. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, "Effects of carrier transport on high-speed quantum well lasers," Appl. Phys. Lett., vol. 59, no. 15, pp. 1835-1837, Oct. 1991.
18. 1-xAs-GaAs quantum-well heterostructure lasers," IEEE J. Quantum Electron., vol. 28, pp. 1983-1989, Oct. 1992.
19. R. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A. Coldren, "Transport limits in high-speed quantum-well lasers: Experiment and theory," IEEE Photon. Technol. Lett., vol. 4,pp. 121-123, Feb. 1992.
20. M. Ohkubo, T. Ijichi, A. Iketani, and T. Kikuta, "980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers," IEEE J. Quantum Elec., vol. 30, no. 2, pp. 408-414, Feb. 1994.
21. S. Tiwari and J. M. Woodall, "Experimental comparison of strained quantum-wire and quantum-well laser characteristics," Appl. Phys. Lett., vol. 64, no. 17, pp. 2211-2213, Apr. 1994.
22. S. W. Corzine, R. H. Yan, and L. A. Coldren, "Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects," Appl. Phys. Lett., vol. 57, no. 26, pp. 2835-2837, Dec. 1990.
23. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers, 2nd ed. New York: Van Nostrand Reinhold, 1993.
24. C. S. Harder, B. J. Van Zeghbroeck, M. P. Kesler, H. P. Meier, P. Vettiger, D. J. Webb, and P. Wolf, "High-speed GaAs/AlGaAs optoelectronic devices for computer applications," IBM J. Res. Dev., vol. 34, no. 4, pp. 568-584, July 1990.
25. W. Kaplan, Advanced Calculus, 3rd ed. Reading, MA: Addison-Wesley, 1984.