Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs

Journal of Electronic Materials

Volumn 26, Issue 4, 1997, Pages 372-375

  Youtz, A E ^a,b   Nabet, B ^a   Castro, F ^a  

^a Drexel University   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Defect assisted tunneling; Low temperature grown GaAs; Metal semiconductor metal (MSM) detectors; Schottky contacts; Thermal annealing

Indexed keywords

ANNEALING; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

METAL SEMICONDUCTOR METAL (MSM) DETECTORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031117946     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0104-x     Document Type: Article

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