Fabrication of precision quantized Hall devices

IEEE Transactions on Instrumentation and Measurement

Volumn 46, Issue 2, 1997, Pages 281-284

  Inglis, A Dave ^a   Minowa, Isao ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b TAMAGAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OPTIMIZATION; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CONTACT RESISTANCES;

HALL EFFECT DEVICES;

EID: 0031117857     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.571832     Document Type: Article

References (6)

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