Reflectivity and reflectance anisotropy of Si(100): A polarisable bond model

Surface Science

Volumn 375, Issue 2-3, 1997, Pages 210-220

  Herrendorfer D ^a   Patterson, C H ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

Ab initio quantum chemical methods and calculations; Reflection spectroscopy; Silicon

Indexed keywords

ANISOTROPY; CHEMICAL BONDS; ELECTRIC FIELD EFFECTS; LIGHT REFLECTION; MATHEMATICAL MODELS; PERMITTIVITY; QUANTUM THEORY; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE;

DIPOLAR WAVES; POLARIZABLE BONDS; REFLECTANCE ANISOTROPY (RA); REFLECTION SPECTROSCOPY; REFLECTIVITY ANISOTROPY (RA);

SEMICONDUCTING SILICON;

EID: 0031117809     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01292-7     Document Type: Article

References (21)

1. T. Yasuda, L. Mantese, U. Rossow and D.E. Aspnes, Phys. Rev. Lett. 74 (1995) 3431.
2. L. Kipp, D.K. Biegelsen, J.E. Northrup, L.E. Swartz and R.D. Bringans, Phys. Rev. Lett. 76 (1996) 2810.
3. C.H. Patterson, D. Weaire and J.F. McGilp, J. Phys. Condens. Matter 4 (1992) 4017.
4. D. Herrendörfer and C.H. Patterson, J. Phys. Chem. Solids 58 (1997) 207.
5. A.P. Lehnen and L.W. Bruch, Physica 100A (1980) 215.
6. W.L. Mochan and R.G. Barrera, Phys. Rev. Lett. 55 (1985) 1192.
7. W. Chen and W.L. Schaich, Surf, Sci. 218 (1989) 580.
8. B.S. Mendoza and W.L. Mochan, Phys. Rev. B 53 (1996) R10473.
9. G.P.M. Poppe, H. Wormeester, A. Molenbroek, C.M.J. Wijers and A. van Silfhout, Phys. Rev. B 43 (1991) 12122; C.M.J. Wijers and G.P.M. Poppe, Phys. Rev. B 46 (1992) 7605; C.M.J. Wijers, G.P.M. Poppe, P.L. de Boeij, H.G. Bekker and D.J. Wentink, Thin Solid Films 233 (1993) 28.
10. G.P.M. Poppe, H. Wormeester, A. Molenbroek, C.M.J. Wijers and A. van Silfhout, Phys. Rev. B 43 (1991) 12122; C.M.J. Wijers and G.P.M. Poppe, Phys. Rev. B 46 (1992) 7605; C.M.J. Wijers, G.P.M. Poppe, P.L. de Boeij, H.G. Bekker and D.J. Wentink, Thin Solid Films 233 (1993) 28.
11. G.P.M. Poppe, H. Wormeester, A. Molenbroek, C.M.J. Wijers and A. van Silfhout, Phys. Rev. B 43 (1991) 12122; C.M.J. Wijers and G.P.M. Poppe, Phys. Rev. B 46 (1992) 7605; C.M.J. Wijers, G.P.M. Poppe, P.L. de Boeij, H.G. Bekker and D.J. Wentink, Thin Solid Films 233 (1993) 28.
12. J.D.E. McIntyre and D.E. Aspnes, Surf. Sci. 24 (1971) 417; R. Del Sole, Solid State Commun. 37 (1981) 537.
13. J.D.E. McIntyre and D.E. Aspnes, Surf. Sci. 24 (1971) 417; R. Del Sole, Solid State Commun. 37 (1981) 537.
14. D. Herrendörfer and C.H. Patterson, J. Vac. Sci. Technol., submitted.
15. The uniform electric field is the long-wavelength approximation to normal-incidence optical radiation.
16. F. Wooten, Optical Properties of Solids (Academic Press, New York, 1972).
17. D.E. Aspnes, in: Properties of Silicon, EMIS Data Review Series No. 4 (INSPEC, London, 1988) p. 59.
18. The RA spectrum for H-terminated Si(001) 4° off towards [110] has been reported by T. Yasuda, D.E. Aspnes, D.R. Lee, C.H. Bjorkman and G. Lucovsky, J. Vac. Sci. Technol. A 12 (1994) 1152, and it has a very weak RA spectrum compared to that of the clean Si(001)-(2 × 1) surface reported by the same group [1]. The H-terminated surface was prepared by immersing the sample in HF solution, and it is unclear whether the sample consisted mainly of a single domain orientation which would be a necessary condition to observe a strong RA signal.
19. A.I. Shkrebtii and R. del Sole, Phys. Rev. Lett. 70 (1993) 2645.
20. W. Daum, H.J. Krause, U. Reichel and H. Ibach, Phys. Rev. Lett. 71 (1993) 1234.
21. F. Manghi, R. Del Sole, A. Selloni and E. Molinari, Phys. Rev. B 41 (1990) 9935.