Plasma passivation effects on polycrystalline silicon thin-film transistors utilizing nitrous oxide plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 2028-2031

  Wang, Fang Shing ^a   Huang, Chun Yao ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Defect passivation; Hot carrier reliability; N2O plasma; Polycrystalline silicon; Thin film transistor

Indexed keywords

DEFECT PASSIVATION; PLASMA PASSIVATION;

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DISSOCIATION; GATES (TRANSISTOR); GRAIN BOUNDARIES; HOT CARRIERS; NITROGEN OXIDES; PASSIVATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS;

THIN FILM TRANSISTORS;

EID: 0031117630     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2028     Document Type: Article

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