Core level analysis of the K/GaP(110) interface

Surface Science

Volumn 377-379, Issue , 1997, Pages 233-237

  D'Addato, S ^a   Bailey, P ^b   Thornton, J M C ^c   Evans, D A ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b DARESBURY LABORATORY   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

Alkali metal; Metal semiconductor interface; Photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; FILM GROWTH; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; POTASSIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM PHOSPHIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031117501     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01363-5     Document Type: Article

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