Light trapping effect in silicon wafers with anodically etched surfaces

Applied Physics A: Materials Science and Processing

Volumn 64, Issue 4, 1997, Pages 357-360

  Krotkus, A ^a   Pacebutas V ^a   Kavaliauskas, J ^a   Subacius I ^a   Grigoras, K ^a   Simkiene I ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ETCHING; LIGHT ABSORPTION; LIGHT SCATTERING; LIGHT TRANSMISSION; PHOTOCONDUCTIVITY; POROUS MATERIALS; SPECTRUM ANALYSIS; SURFACE ROUGHNESS;

BANDEDGE TRANSITIONS; LIGHT INTENSITY; LIGHT TRAPPING EFFECTS;

SEMICONDUCTING SILICON;

EID: 0031117354     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050490     Document Type: Article

References (7)

1. P.D.J. Calcott, K.J. Nash, L.T. Canham, M.J. Kane and D. Brumhead: Journal of Luminescence 57, 257 (1993)
2. F. Koch, V. Petrova-Koch and T. Muschik: Journal of Luminescence 57, 271 (1993)
3. H.P. Maruska, F. Namavar and N.M. Kalkhoran: Appl. Phys. Lett. 61, 1338 (1992)
4. G. Smestad, M. Kunst and C. Vial: Solar Energy Materials and Solar Cells 26, 277 (1992)
5. V. Pačebutas, A. Krotkus, I. Šimkienė and R. Viselga: J. Appl. Phys. 77, 2501 (1995)
6. S. Bastide, M. Cuniot, P. Williams, N. Le Quang, D. Sarti and C. Levy-Clement: In Proc. 12th European Photovoltaic Solar Energy Conference, ed. by R. Hill, W. Palz, P. Helm (Amsterdam 1994)
7. E. Yablonovitch and G. Cody: IEEE Transactions on Electron Devices ED 29, 300 (1982)