Unbalanced facet output power and large spot size in 1.3μm tapered active stripe lasers

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 781-782

  Cho, H S ^a   Park, K H ^a   Lee, J K ^a   Jang, D H ^a   Kim, J S ^a   Park, K S ^a   Park, C S ^a   Pyun, K E ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COATINGS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR JUNCTION LASERS;

SEMICONDUCTOR LASERS;

EID: 0031117137     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970504     Document Type: Article

References (4)

1. KAUKAWA. A., IWAI, N., YAMANAKA, N., and YOKOUCHI, N.: 'Output beam characteristics of 1.3μm GaInAsP/InP SL-QW lasers with narrow and circular output beam', Electron. Lett., 1995, 31, (7), pp. 559-560
2. FUKANO, H., KADOTA, Y., KONDO, Y., UEKI, M., SAKAI, Y., KASAYA, K., YOKOYAMA, K., and TOHMORI, Y.: '1.3μm large spot-size laser diodes with laterally tapered active layer', Electron. Lett., 1995, 31, (17), pp. 1439-1440
3. KOBAYASHI, H., EKAWA, M., OKAZAKI, N., AOKI, O., OGITA, S., and SODA, H.: 'Tapered thickness MQW waveguide BH MQW lasers', IEEE Photonics Technol. Lett., 1994, 6, (9), pp. 1080-1081
4. CHO, H.S., JANG, D.H., LEE, J.K., PARK, K.H., KIM, J.S., LEE. S.W., KIM, H.M., and PARK, H.-M.: 'High-performance strain-compensated multiple quantum well planar buried heterostructure laser diodes with low leakage current', Jpn. J. Appl. Phys., 1996, 35, (3), pp. 1751-1757