Time-development of transient-carrier temperature, density, and gain spectrum in ultrashort optical pulse excited InGaAs multiquantum-well laser structure

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 218-222

  Wang, Jian ^b,c   Schweizer, Heinz C ^a,b,d,e,f  

^a IEEE

^b UNIVERSITY OF STUTTGART   (Germany)

^c FUDAN UNIVERSITY   (China)

^d NOKIA RESEARCH CENTER   (United States)

^e Universitaet Stuttgart ^*  (Germany)

^f German Physical Society   (Germany)

Author keywords

Optical modulation; Optical pumping; Quantum well laser; Semiconductor laser

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; LIGHT MODULATION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAFAST PHENOMENA;

AMPLIFIED SPONTANEOUS EMISSION (ASE);

QUANTUM WELL LASERS;

EID: 0031109218     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605659     Document Type: Article

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