Large- and small-signal dynamic behavior of high-speed dual-polarization quantum-well semiconductor lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 279-289

  Nguyen, Linh V T ^a,b,c   Lowery, Arthur J ^a,b,d,e,f,g   Novak, Dalma ^a,b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b IEEE   (Australia)

^c UNIVERSITY OF ADELAIDE   (Australia)

^d DURHAM UNIVERSITY   (United Kingdom)

^e Marconi Radar Systems

^f UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^g Institution of Electrical Engineers   (United Kingdom)

Author keywords

Dual polarization; Laser dynamics and modeling; Quantum well; Semiconductor lasers

Indexed keywords

COMPUTER SIMULATION; LASER THEORY; LIGHT MODULATION; LIGHT POLARIZATION; SEMICONDUCTOR DEVICE MODELS;

TRANSVERSE ELECTRIC (TE) MODES; TRANSVERSE MAGNETIC (TM) MODES;

QUANTUM WELL LASERS;

EID: 0031108816     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605669     Document Type: Article

References (14)

1. D. P. Bour, K. J. Beernink, D. W. Treat, T. L. Paoli, and R. L. Thornton, "Dual-polarization, single quantum-well AlGaInP laser diode structure," IEEE J. Quantum Electron., vol. 30, pp. 2738-2742, 1994.
2. A. Mathur and P. D. Dapkus, "1.55-μm dual-polarization lasers implemented with compressive- and tensile-strained quantum wells," IEEE Photon. Technol. Lett., vol. 7, pp. 1243-1245, 1995.
3. S. Pajarola, G. Guekos, and J. Mørk, "Optical generation of millimeter-waves using a dual-polarization emission external cavity diode laser," IEEE Photon. Technol. Lett., vol. 8, pp. 157-159, 1996.
4. Y. C. Chen and J. M. Liu, "Direct polarization switching in semiconductor lasers," Appl. Phys. Lett., vol. 45, pp. 604-606, 1984.
5. J.-J. Huang, C. C. Yang, and D.-W. Huang, "Carrier capture competition between two different quantum wells is dual-wavelength semiconductor lasers," IEEE Photon. Technol. Lett., vol. 8, pp. 752-754, 1996.
6. K. Magari, M. Okamoto, and Y. Nogochi, "1.55 μm polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier," IEEE Photon. Technol. Lett., vol. 3, pp. 998-1000, 1991.
7. V. O. K. Li, A. E. Willner, P. D. Dapkus, K.-C. Lee, A. D. Norte, E. Park, W. Shieh, and A. Mathur, "Wavelength conversion and wavelength routing for high-efficiency all-optical networks: A proposal for research on all-optical networks," J. High Speed Network, vol. 4, pp. 5-25, 1995.
8. A. Marthur, "1.3 μm and 1.55 μm InGaAsP-InP quantum well lasers," Ph.D. dissertation, Dept. of Elect. Eng., Univ. Southern California, Los Angeles, 1995.
9. L. V. T. Nguyen, A. J. Lowery, P. C. R. Gurney, and D. Novak, "A time-domain model for high-speed quantum-well lasers including carrier transport effects," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 494-504, 1995.
10. A. J. Lowery, "A two-port bilateral model for semiconductor lasers," IEEE J. Quantum Electron., vol. 28, pp. 82-92, 1992.
11. R. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A. Coldren, "Transport limits in high-speed quantum-well lasers: Experiment and theory," IEEE Photon. Technol. Lett., vol. 4, pp. 121-123, 1992.
12. A. Hangleiter, A. Grabmaier, and G. Fuchs, "Damping of the relaxation resonance in multiple-quantum-well lasers by slow interwell transport," Appl. Phys. Lett., vol. 62, pp. 2316-2318, 1993.
13. T. A. DeTemple and C. M. Herzinger, "On the semiconductor laser logarithmic gain-current density relation," IEEE J. Quantum Electron., vol. 29, pp. 1246-1252, 1993.
14. D. T. Cassidy and C. S. Adams, "Polarization of the output of InGaAsP semiconductor diode lasers," IEEE J. Quantum Electron., vol. 25, pp. 1156-1160, 1989.