Quadrupolar nutation NMR on a compound semiconductor gallium-arsenide

Solid State Nuclear Magnetic Resonance

Volumn 8, Issue 2, 1997, Pages 123-128

  Takeuchi, J ^a   Nakamura, H ^a,c   Yamada, H ^a,d   Kita, E ^a   Tasaki, A ^a   Erata, T ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Compound semiconductor; GaAs; Lattice defect; Nuclear magnetic resonance; Nutation; Quadrupolar interaction

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTRIC FIELD EFFECTS; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; STRAIN;

COUPLING CONSTANTS; NUTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM; GALLIUM ARSENIDE; INDIUM; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLOGRAPHY; ELECTROCHEMISTRY; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SEMICONDUCTOR;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLOGRAPHY; ELECTROCHEMISTRY; GALLIUM; INDIUM; MAGNETIC RESONANCE SPECTROSCOPY; MODELS, CHEMICAL; MOLECULAR CONFORMATION; SEMICONDUCTORS;

EID: 0031106967     PISSN: 09262040     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0926-2040(96)01287-8     Document Type: Article

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