Nucleation behavior in the presence of charge in the CVD diamond process

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 416-425

  Choi, Kyoon ^a   Kang, Suk Joong L ^a   Jang, Hyun M ^b   Hwang, Nong M ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CHARGE; GRAPHITE; NUCLEATION; PLASMAS; SURFACE TENSION;

CHARGE INDUCED NUCLEATION; COULOMB ENERGY TERM; NUCLEATION BARRIER;

SEMICONDUCTING DIAMONDS;

EID: 0031104386     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00759-2     Document Type: Article

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