Reduction of the reverse short channel effect in thick SOI MOSFET's

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 90-92

  Tsoukalas, D ^a   Tsamis, C ^a,b   Kouvatsos, D N ^a,b   Revva, P ^a   Tsoi, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; OXIDES; POINT DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; VOLTAGE MEASUREMENT;

POLYSILICON DEPOSITION; REVERSE SHORT CHANNEL EFFECT; THERMAL OXIDATION;

MOSFET DEVICES;

EID: 0031104354     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556090     Document Type: Article

References (14)

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