Die attach failures related to wafer back metal processing - An AES study

Microelectronics Reliability

Volumn 37, Issue 3, 1997, Pages 519-523

  Radhakrishnan, M K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHROMIUM; DIES; FAILURE ANALYSIS; GOLD; METALLIC FILMS; METALLIZING; NICKEL; OXIDES; SILICON WAFERS; SINTERING;

DIE ATTACH FAILURES; DIE ATTACHMENT; NICKEL OXIDE;

RELIABILITY;

EID: 0031104216     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(95)00097-6     Document Type: Article

References (3)

1. Nolder, R. L. and Malone, D. N., Analysis of a silver substrate gold-silicon preform die attach system. Proc. 25th IEEE IRPS, 1987, pp. 229-237.
2. Li, T. P. L., Zigler, E. L. and Hillyer, D. E., AES/ESCA/ SEM/EDX studies of die bond materials and interfaces. Proc. 22nd IEEE IRPS, 1984, pp. 169-174.
3. Hawkins, G., Berg, H., Mahalingam, M., Lewis, G. and Lofgran, L., Measurement of silicon strength as affected by wafer back processing. Proc. 25th IEEE IRPS, 1987, pp. 216-223.