0.85-μm Vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 280-281

  Kohama, Yoshitaka ^a,b   Ohiso, Yoshitaka ^b   Tateno, Kouta ^b   Kurokawa, Takashi ^b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Semiconductor laser arrays

Indexed keywords

ARRAYS; CALCULATIONS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS; LOW PRESSURE METALORGANIC CHEMICAL CHEMICAL VAPOR DEPOSITION; REACTIVE ION BEAM ETCHING; SEMICONDUCTOR LASER ARRAYS; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0031103115     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556046     Document Type: Article

References (8)

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