Stable InP MIS device using silicon nitride/anodic oxide double-layer dielectric

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 114-116

  Devnath, V ^a   Bhat, K N ^a   Rao, P R S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; OHMIC CONTACTS; OXIDATION; OXIDES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

CAPACITANCE VOLTAGE CHARACTERISTICS; OXALIC ACID; TARTARIC ACID;

MIS DEVICES;

EID: 0031103002     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556098     Document Type: Article

References (18)

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