Random stacking of a commensurate guest layer in an ordered host: Ni/Al layer-double-hydroxides

Solid State Communications

Volumn 101, Issue 11, 1997, Pages 835-839

  Hines, D R ^a   Seidler, G T ^a   Treacy, M M J ^a   Solin, S A ^a,b  

^a NEC LABORATORIES AMERICA   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

A. insulators; C. crystal structure and symmetry; D. order disorder effects; X ray scattering

Indexed keywords

ALUMINUM; CRYSTAL LATTICES; CRYSTAL SYMMETRY; ELECTROMAGNETIC WAVE SCATTERING; INTERCALATION COMPOUNDS; NICKEL; ORDER DISORDER TRANSITIONS; RANDOM PROCESSES; X RAYS;

NICKEL ALUMINUM LAYER DOUBLE HYDROXIDES;

SOLID SOLUTIONS;

EID: 0031102676     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00682-5     Document Type: Article

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