Optical imaging of carrier dynamics in silicon with subwavelength resolution

Applied Physics Letters

Volumn 70, Issue 13, 1997, Pages 1656-1658

  La Rosa, A H ^a   Yakobson, B I ^a   Hallen, H D ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; INFRARED RADIATION; NATURAL FREQUENCIES; OPTICAL MICROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SURFACES; SWITCHING;

CARRIER DYNAMICS; CARRIER LIFETIME; INTERBAND RECOMBINATION; SUBWAVELENGTH RESOLUTION;

CHARGE CARRIERS;

EID: 0031102196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118661     Document Type: Article

References (18)

1. J. R. Haynes and W. Shockley, Phys. Rev. 81, 835 (1951); S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
2. J. R. Haynes and W. Shockley, Phys. Rev. 81, 835 (1951); S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
3. J. Waldmeyer, J. Appl. Phys. 63, 1977 (1988).
4. D. L. Polla, IEEE Electron. Device Lett. EDL-4, 185 (1983).
5. G. Bohnert, R. Hacker, and A. Hangleiter, J. Phys. (France) Colloq. 4, 617 (1988).
6. J. W. Goodman, Introduction to Fourier Optics (McGraw-Hill, New York, 1968).
7. D. W. Pohl, W. Denk, and M. Lanz, Appl. Phys. Lett. 44, 651 (1984).
8. E. Betzig and J. K. Trautman, Science 257, 189 (1992).
9. E. Betzig, J. K. Trautman, T. D. Harris, J. S. Weiner, and R. L. Kostelak, Science 251, 1468 (1991).
10. A. H. La Rosa, C. L. Jahncke, and H. D. Hallen, Proc. SPIE 2384, 101 (1995).
11. A. La Rosa, C. L. Jahncke, and H. D. Hallen, Ultramicroscopy 57, 303 (1995).
12. E. Betzig, Principles and Applications of Near-Field Scanning Optical Microscopy (NSOM) (Kluwer, Acr-et-Senans, France, 1992), Vol. 1-7, p. 15.
13. B. I. Yakobson, P. J. Moyer, and M. A. Paesler, J. Appl. Phys. 73, 7984 (1993).
14. A. H. La Rosa, B. I. Yakobson, and H. D. Hallen, Appl. Phys. Lett. 67, 2597 (1995).
15. H. D. Hallen, B. I. Yakobson, A. La Rosa, and M. A. Paesler, Proc. SPIE 2535, 34 (1995).
16. 3), n-type Czochralski silicon wafers. The sample surfaces were cleaned with a HF solution prior to silicon dioxide growth. The sample shown in Figs. 2 and 3(a) had a thin, native oxide. The sample shown in Fig. 3 was covered with a 60-nm-thick oxide grown in a commercial furnace with an oxygen ambient.
17. -4. τ is expected to be even shorter locally, although the average value can be longer.
18. F. Shimura, T. Okui, and T. Kusama, J. Appl. Phys. 67, 7168 (1990).