High-resolution transmission electron microscopy investigation of a stacking fault in β-Si3N4

Journal of Materials Science

Volumn 32, Issue 6, 1997, Pages 1431-1436

  Ning, X G ^a   Wilkinson, D S ^a   Weatherly, G C ^a   Ye, H Q ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL WHISKERS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC PLANES; IMAGE SIMULATIONS; SILICON NITRIDE WHISKERS;

SILICON NITRIDE;

EID: 0031100874     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018541631100     Document Type: Article

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