Polycrystalline silicon and silicon-germanium films for advanced microelectronics

IETE Journal of Research

Volumn 43, Issue 2-3, 1997, Pages 193-205

  Lahiri, S K ^a   Das, S ^a   Umapathi, B ^a   Kal, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; DEPOSITION; GRAIN BOUNDARIES; ION BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPUTTERING; THIN FILM TRANSISTORS;

LARGE AREA DISPLAY ELECTRONICS; MICROELECTRONIC MATERIAL; POLYCRYSTALLINE SILICON FILM; SILICON GERMANIUM FILM;

SEMICONDUCTING FILMS;

EID: 0031100830     PISSN: 03772063     EISSN: 0974780X     Source Type: Journal    
DOI: 10.1080/03772063.1997.11415978     Document Type: Article

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