Optoelectronic properties of n-type CdZnTe 2-DEG single-quantum-well heterostructures

IEEE Journal of Quantum Electronics

Volumn 33, Issue 3, 1997, Pages 393-403

  Atanackovic, Petar B ^a,c   Steele, Timothy A ^b   Munch, Jesper ^c,d  

^a DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^b CMTEK Pty/DSTO ^*

^c UNIVERSITY OF ADELAIDE   (Australia)

^d UNIVERSITY OF CHICAGO   (United States)

Author keywords

Modulators; Quantum wells

Indexed keywords

HALL EFFECT MEASUREMENT; PHASE SPACE ABSORPTION QUENCHING; QUANTUM CONFINED STARK EFFECT; TWO DIMENSIONAL ELECTRON GAS HETEROSTRUCTURE;

EPITAXIAL GROWTH; LIGHT ABSORPTION; LIGHT MODULATORS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

HETEROJUNCTIONS;

EID: 0031100318     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.556008     Document Type: Article

References (69)

1. L. Esaki, "A birds-eye view on the evolution of semiconductor super-lattices and quantum wells," IEEE J. Quantum Electron., vol. QE-22, pp. 1611-1622, 1986.
2. A. Y. Cho, "Film deposition by molecular-beam techniques," J. Vac. Sci. Technol., vol. 8, no. 5, pp. S31-S38, 1971.
3. H. E. Ruda, Widegap II-VI Compounds for Opto-electronic Application, 1st ed. London, U.K.: Chapman and Hall, 1992.
4. M. A. Herman and H. Sitter, Molecular Beam Epitaxy-Fundamentals and current status (Springer series in materials science). Berlin, Germany: Springer-Verlag, 1989, vol. 7.
5. D. A. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Weigmann, T. H. Wood, and A. C. Burus, "Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device," Appl. Phys. Lett., vol. 45, no. 1, pp. 13-15, 1984.
6. C. Gourgon, L. Dang, H. Mariette, C. Vieu, and F. Muller, "Optical properties of CdTe/CdZnTe wires and dots fabricated by a final anodic oxidation etching," Appl. Phys. Lett., vol. 66, no. 13, pp. 1635-1637, 1995.
7. A. V. Nurmikko and R. L. Gunshor, "Blue-green emitters in wide-gap II-VI quantum confined structures," IEEE J. Quantum Electron., vol. 30, pp. 619-630, 1994.
8. M. Folkhard, G. Shen, V. Kumar, T. Steele, D. Rees, I. Varga, D. Carr, K. Fueloep, B. Johnson, P. Orders, R. Hartley, H. Buskes, and M. Gal, "In-situ ellipsometric measurements of MBE growth of CdTe/HgTe and CdTe/ZnTe superlattices," J. Electron. Mater. (Special Issue Paper), vol. 22, no. 8, pp. 1097-1102, 1993.
9. I. Sugiyama, A. Hobbs, T. Saito, O. Ueda, K. Shinohara, and H. Takigawa, "Disslocation reduction in HgCdTe epilayers on GaAs by using CdTe/CdZnTe strained-layer superlattices in CdTe layers," J. Crystal Growth, vol. 117, pp. 161-165, 1992.
10. G. Monfroy, S. Sivananthan, X. Chu, J. P. Faurie, R. D. Knox, and J. L. Staudenmann, "Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe," Appl. Phys. Lett., vol. 49, no. 3, pp. 152-154, 1986.
11. Y. Hefetz, D. Lee, A. V. Nurmikko, S. Sivananthan, X. Chu, and J.-P. Faurie, "Quasitwo-dimensional excitons in a strongly localized regime in CdTe-ZnTe superlattices," Phys. Rev. B, vol. 34, no. 6, pp. 4423-4425, 1986.
12. 0.75Te/ZnTe quantum well lasers grown on GaAs substrates," Appl. Phys. Lett., vol. 53, no. 10, pp. 834-836, 1988.
13. R. H. Milles, G. Y. Wu, M. B. Johnson, T. C. McGill, J. P. Faurie, and S. Sivananthan, "Photoluminesence studies of ZnTe-CdTe strained-layer superlattices," Appl. Phys. Lett., vol. 48, no. 20, pp. 1383-1385, 1986.
14. D. Lee, A. M. Johnson, J. E. Zucker, C. A. Burrus, and R. D. Feldman, "High-temperature quasicontinuous operation of optically pumped CdZnTe/ZnTe multiple quantum well lasers at 620nm," IEEE Photon. Technol. Lett., vol. 4, pp. 949-951, 1992.
15. A. Partovi, A. M. Glass, D. H. Olson, G. J. Zydzik, K. T. Short, R. D. Feldman, and R. F. Austin, "High-speed photodiffractive effect in semi-insulating CdZnTe/ZnTe multiple quantum wells," Opt. Lett., vol. 17, no. 9, pp. 655-657, 1992.
16. E. O'Reilly and A. Adams, "Band-structure engineering in strained semiconductor lasers," IEEE J. Quantum Electron., vol. 30, pp. 366-379, 1994.
17. xTe quantum well heterostructures," Ph.D. dissertation, University of Adelaide, Australia, 1996.
18. D. Miller, D. Chemla, T. Damen, A. Gossard, W. Weigmann, T. Wood and C. Burrus, "Band-edge elctroabsorption in quantum well structures: The quantum confined stark effect," Phys. Rev. Lett., vol. 53, pp. 2173-2175, 1984.
19. G. D. Mahan, "Excitons in metals: Infinite hole mass," Phys. Rev. , vol. 163, no. 3, pp. 612-617, 1967.
20. G. Livescu, D. D. Miller, D. Chemla, M. Ramaswamy, T. Chang, N. Sauer, A. Gossard, and J. English, "Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells," IEEE J. Quantum Electron., vol. 24, pp. 1677-1689, 1988.
21. R. Hartley, M. Folkhard, D. Carr, P. Orders, D. Rees, I. Varga, and "Ellipsometry: A technique for real time monitoring and analysis of MBE-grown CdHgTe and CdTe/HgTe superlattices," J. Crystal Growth, vol. 117, pp. 166-170, 1992.
22. xTe by molecular beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices," J. Appl. Phys., vol. 72, no. 7, pp. 2927-2940, 1992.
23. S. Tatarenko, F. Bassinin, J. Klein, K. Saminadayar, J. Cibert, and V. Etgens, "Surface reconstructions of (001) CdTe and their role in the dynamics of evaporation and molecular-beam epitaxy growth," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 12, no. 1, pp. 140-147, 1994.
24. W. Walukiewicz, H. Ruda, J. Lagowski, and H. Gatos, "Electron mobility in modulation-doped heterostructures," Phys. Rev. B, vol. 30, no. 8, pp. 4571-4581, 1984.
25. T. Ando, A. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, no. 2, pp. 437-621, 1982.
26. A. Fowler, "Substrate bias effects on the electron mobility in Silicon inversion layers at low temperatures," Phys. Rev. Lett., vol. 34, no. 1, pp. 15-17, 1975.
27. F. Fang and A. Fowler, "Transport properties of electrons in inverted Silicon surfaces," Phys. Rev., vol. 169, no. 3, pp. 619-631, 1968.
28. C. Kocot and C. Stolte, "Backgating in GaAs MESFET's," IEEE Trans. Electron. Devices, vol. ED-29, pp. 1059-1064, 1982.
29. P. B. Atanackovic and J. Munch, "Electron tunneling and opto-electronic properties of CdZnTe 2-DEGs: Theory and experiment," IEEE J. Quantum Electron., to be published, 1996.
30. 1 - xAs /GaAs layers," J. Appl. Phys., vol. 54, no. 11, pp. 6432-6438, 1983.
31. 1 - xAs heterojunctions with controlled electron concentrations," Phys. Rev. B, vol. 33, no. 12, pp. 8291-8303, 1986.
32. xTe strained quantum wells," Phys. Rev. B, vol. 42, no. 17, pp. 11392-11395, 1990.
33. J. Francou, K. Saminadayar, and J. Pautrat, "Shallow donors in CdTe," Phys. Rev. B, vol. 41, no. 17, pp. 12035-12045, 1990.
34. G. Mandel, "Self-compensated limited conductivity in binary semiconductors. I Theory," Phys. Rev., vol. 134, no. 4A, pp. A1073-A1079, 1964.
35. G. Neumark, "Effect of deep levels on semiconductor carrier concentrations in the case of strong compensation," Phys. Rev. B, vol. 26, no. 4, pp. 2250-2252, 1982.
36. S. Luryi, A. Kastalsky, A. Gossard, and R. Hendel, "Charge injection transistor based on real-space hot-electron transfer," IEEE Trans. Electron. Devices, vol. ED-31, pp. 832-839, 1984.
37. xTe heterostructures," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 6, no. 4, pp. 2614-2618, 1988.
38. A. Fox, D. Miller, G. Livescu, J. Cunningham, and W. Jan, "Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, pp. 2281-2295, 1991.
39. S. Luryi, "An induced base hot-electron transistor," IEEE Electron Device Lett., vol. EDL-6, pp. 178-180, 1985.
40. C. Chang, W. Liu, M. Jame, S. Luryi, and S. Sze, "Induced base transistor fabricated by molecular beam epitaxy," IEEE Electron Device Lett., vol. EDL-7, pp. 497-499, 1986.
41. xTe/ZnTe multiple quantum wells," Appl. Phys. Lett., vol. 53, no. 15, pp. 1417-1419, 1988.
42. P. Becker, D. Lee, M. deBarros, A. Johnson, A. Prosser, R. Feldman, R. Austin, and R. Behringer, "Femtosecond dynamic exciton bleaching in room temperature II-VI quantum wells," IEEE J. Quantum Electron., vol. 28, 1992.
43. S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, "Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structures," Phys. Rev. B, vol. 32, no. 10, pp. 6601-6609, 1985.
44. D. Lee, A. Johnson, J. Zucker, R. Feldman, and R. Austin, "Room temperature excitonic absorption in CdZnTe/ZnTe quantum wells: Contributions to exciton linewidth," J. Appl. Phys., vol. 69, no. 9, 1991.
45. D. Lee, J. Zucker, A. Johnson, R. Feldman, and R. Austin, "Room-temperature excitonic saturation in CdZnTe/ZnTe quantum wells," Appl. Phys. Lett., vol. 57, no. 11, pp. 1132-1134, 1990.
46. A. Kastalsky, S. Luryi, A. Gossard, and R. Hendel, "A field-effect transistor with a neagtive differential resistance," IEEE Electron Device Lett., vol. EDL-5, no. 2, pp. 57-60, 1984.
47. D. Miller, D. Chemla, T. Damen, A. Gossard, W. Wiegmann, T. Wood, and C. Burrus, "Electric field dependence of optical absorption near the band gap of quantum- well structures," Phys. Rev. B., vol. 32, no. 2, pp. 1043-1060, 1985.
48. J. Zucker, M. Wegener, K. Jones, T. Chang, N. Sauer, and D. Chemla, "Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure," Appl. Phys. Lett, vol. 56, no. 20, pp. 1951-1953, 1990.
49. G. Bastard, "Wave mechanics applied to semiconductor heterostructures," Les Editions de Physique, 91944 Les Ulis CEDEX A, France, 1988.
50. A. Larsson, P. Andrekson, S. Eng, and A. Yariv, "Tunable superlattice p-i-n photodetectors: Characteristics, theory and applications," IEEE J. Quantum Electron., vol. 24, pp. 787-801, 1988.
51. H. Mathieu, A. Chatt, J. Allegre, and J. Faurie. "Subband structure of strained-layer CdTe/ZnTe superlattices: A reexamination," Phys. Rev. B, vol. 41, no. 9, pp. 6082-6085, 1990.
52. T. Due, C. Hsu, and J. Faurie, "Linear (commutativity and Transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe and ZnTe," Phys. Rev. Lett., vol. 58, no. 11, pp. 1127-1130, 1987.
53. xTe," Phys. Rev. B, vol. 43, no. 18, pp. 14629-14637, 1991.
54. xTe strained layer quantum wells by differential spectroscopy," Phys. Rev. B, vol. 41, no. 12, pp. 8195-8202, 1990.
55. D. Ahn, S. Chuang, and Y. Chang, "Valence band mixing effects on the gain and the the refractive index cahnge of quantum well lasers," J. Appl. Phys., vol. 64, no. 8, pp. 4056-4063, 1988.
56. xTe," Phys. Rev. B, vol. 43, no. 18, pp. 14629-14637, 1991.
57. K. Goossen, J. Cunningham, and W. Jan, "Excitonic electroabsorption in extremely shallow quantum wells," Appl. Phys. Lett., vol. 57, no. 24, pp. 2582-2583, 1990.
58. S. Schmitt-Rink, C. Ell, and H. Haug, "Many-body effects in the absorption, gain and luminescence spectra of semiconductor quantum-well structures," Phys. Rev. B, vol. 33, no. 2, pp. 1183-1189, 1986.
59. D. S. Chemla, I. Bar-Joseph, C. Klingshirn, D. A. B. Miller, J. M. Kuo, and T. Y. Chang, "Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel," Appl. Phys. Lett., vol. 50, no. 10, pp. 585-587, 1987.
60. I. Bar Joseph, J. Kuo, C. Klingshirn, G. Livescu, T. Chang, D. Miller, and D. Chemla, "Absorption spectroscopy of the continuous transition from low to high electron density in a single modulation-doped InGaAs quantum well," Phys. Rev. Lett, vol. 59, no. 12, pp. 1357-1360, 1987.
61. J. Zucker, M. Wegener, K. Jones, T. Chang, N. Sauer, and D. Chemla, "Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure," Appl. Phys. Lett., vol. 56, no. 20, pp. 1951-1953, 1990.
62. A. Von Lehmen, J. Zucker, J. Heritage, and D. Chemla, "Phonon sideband of quasitwo-dimensional excitons in GaAs quantum wells," Phys. Rev. B, vol. 35, no. 12, pp. 6479-6482, 1987.
63. T. Duc, C. Hsu, and J. Faurie, "Linear (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe and ZnTe," Phys. Rev. Lett., vol. 58, no. 11, pp. 1127-1130, 1987.
64. J. Nelson, M. Paxmann, W. Barnham, J. Roberts, and C. Button, "Steady-state escape from single quantum wells," IEEE J. Quantum Electron., vol. 29, pp. 1460-1468, 1993.
65. T. Wood, J. Pastalan, C. Burrus Jr, d B. Johnson, B. Miller, J. deMiguel, U. Koren, and M. Young, "Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation," Appl. Phys. Lett., vol. 57, no. 11, pp. 1081-1083, 1990.
66. F. Yang, M. Wilkinson, E. Austin and K. O'Donnel, "Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors," Phys. Rev. Lett., vol. 70, no. 3, pp. 323-326, 1993.
67. F. Henneberger, S. Schmitt-Rink, and E. Gobel, Eds., Optics of Semiconductor Nanostructures. Berlin, Germany: Akademie Verlag, 1993.
68. D. Miller, D. Chemla, T. Damen, T. Wood, C. Burrus, Jr, A. Gossard, and W. Wiegmann, "The quantum well self-electrooptic effect device: Optoelectronic Bistability and oscillation, and self-linearized modulation," IEEE J. Quantum Electron., vol. QE-21, pp. 1462-1476, 1985.
69. K. Goossen, J. Cunningham, and W. Jan, "Single-layer structure supporting both heterojunction bipolar transistor and surface-normal modulator," IEEE Photon. Technol. Lett., vol. 4, pp. 393-395, 1992.