|
Volumn 36, Issue 3 A, 1997, Pages
|
Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CAPACITANCE MEASUREMENT;
COMPOSITION EFFECTS;
CRYSTAL ORIENTATION;
ETCHING;
HETEROJUNCTION BIPOLAR TRANSISTORS;
IODINE COMPOUNDS;
PH EFFECTS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
VOLTAGE MEASUREMENT;
REDOX SOLUTIONS;
SELECTIVE LATERAL ETCHING;
HETEROJUNCTIONS;
|
EID: 0031098298
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l253 Document Type: Article |
Times cited : (3)
|
References (0)
|