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Volumn 36, Issue 3 A, 1997, Pages

Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; IODINE COMPOUNDS; PH EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

EID: 0031098298     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l253     Document Type: Article
Times cited : (3)

References (0)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.