Magneto-optics of electron-gases confined in GaAs quantum dots

Solid State Communications

Volumn 101, Issue 12, 1997, Pages 865-869

  Patel, S ^a   Plaut, A S ^a   Hawrylak, P ^b   Lage, H ^c   Grambow, P ^c   Heitmann, D ^d   Von Klitzing, K ^c   Harbison, J P ^e   Florez, L T ^e  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d UNIVERSITY OF HAMBURG   (Germany)

^e TELCORDIA TECHNOLOGIES   (United States)

Author keywords

A. semiconductors

Indexed keywords

FERMI LEVEL; HETEROJUNCTIONS; MAGNETOOPTICAL EFFECTS; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ELECTRON GAS CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031097543     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00751-X     Document Type: Article

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