Impedance study of semiconductor property of the passive film on titanium

Zairyo to Kankyo/ Corrosion Engineering

Volumn 46, Issue 3, 1997, Pages 169-175

  Azumi, Kazuhisa ^a   Ohtsuka, Toshiaki ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; Breakdown; Dielectric constant; Donor density; Impedance

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; PASSIVATION; PERMITTIVITY; POLARIZATION; SPECTROSCOPY; TITANIUM;

DONOR DENSITY; IMPEDANCE METHOD; MICRO CRYSTALLIZATION; MOTT-SCHOTTKY PLOT; PASSIVE FILM; POTENTIOSTATIC POLARIZATION; SEMICONDUCTIVE PROPERTIES; SPACE CHARGE LAYER;

PROTECTIVE COATINGS;

EID: 0031096977     PISSN: 09170480     EISSN: None     Source Type: Journal    
DOI: 10.3323/jcorr1991.46.169     Document Type: Article

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