Interface structure of a chlorine-doped Si3N4 studied by high-resolution transmission electron microscopy

Journal of Materials Science Letters

Volumn 16, Issue 6, 1997, Pages 453-456

  Kleebe, H J ^a   Pezzotti, G ^b   Nishida, T ^b  

^a UNIVERSITY OF BAYREUTH   (Germany)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); FRICTION; GRAIN BOUNDARIES; HOT ISOSTATIC PRESSING; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MORPHOLOGY; PHASE COMPOSITION; SINTERING; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS INTERGRANULAR PHASE; BOUNDARY THICKNESS; GRAIN BOUNDARY RELAXATION; INTERNAL FRICTION ANALYSIS;

SILICON NITRIDE;

EID: 0031096725     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018552024044     Document Type: Article

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