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Synthetic Metals

Volumn 87, Issue 1, 1997, Pages 5-10

Electronic properties of junctions between aluminum and neutral or doped poly[3-(4-octylphenyl)-2,2′-bithiophene]

(2) Bantikassegn, W a Inganas O a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Doping; Electronic properties; Poly 3 (4 octylphenyl) 2,2 bithiophene ; Schottky junctions

Indexed keywords

ALUMINUM; AROMATIC POLYMERS; CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); ORGANIC CONDUCTORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SULFUR COMPOUNDS; VOLTAGE MEASUREMENT;

DIODE QUALITY FACTOR;

SCHOTTKY BARRIER DIODES;

EID: 0031095704 PISSN: 03796779 EISSN: None Source Type: Journal
DOI: 10.1016/S0379-6779(97)80090-2 Document Type: Article

Times cited : (20)

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