Role of antimony sulfide buffer layers in the growth of ferroelectric antimony sulfo-iodide thin films

Journal of Materials Research

Volumn 12, Issue 3, 1997, Pages 825-832

  Solayappan, N ^a   Raina, K K ^a   Pandey, R K ^a   Varshney, U ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b Amer Res Corporation of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY COMPOUNDS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FERROELECTRICITY; FILM GROWTH; PERMITTIVITY; SILICON; THIN FILMS;

ANTIMONY SULFIDE BUFFER LAYER; FERROELECTRIC ANTIMONY SULFO IODIDE THIN FILMS; PYRO OPTIC EFFECT;

FERROELECTRIC MATERIALS;

EID: 0031094838     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0120     Document Type: Article

References (18)

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